Warp Speed

WARP Speed™ IGBT for SMPS

IGBTs are voltage-controlled power transistors, that have higher current densities than equivalent high-voltage power MOSFETs. They are faster and offer far superior drive and output characteristics than power bipolar transistors. IGBTs are therefore a more cost-effective solution in almost all high-voltage high-current, moderate frequency applications such as motor drive.
FEATURES AT A GLANCE

2 to 2.5 times the current density of MOSFETs
Lower conduction losses at equivalent current rating compared to MOSFETs
Reduced current tail for high frequency operation
“Positive-only” gate drive
THE IR ADVANTAGE

Up to 50% lower cost than MOSFET for equivalent application
Smaller die size and/or package than MOSFET for equivalent application
Operates at up to 100kHz
Simplified gate drive, even for gate driver ICs
The IGBT in TO-247 delivers the same efficiency at full load
as the MOSFET in the larger TO-247 package

SPECIFICATIONS

Device
Package
Conditions
IC@
100°C
RDS(on)
VCES
VCE(on)max.
Full load efficiency
IRFPS40N60K
Super-247™
80kHz, 2kW, 180V ACin PFC
40A
110mW
600V
N/A
95.8%
IRG4PC50W
TO-247
80kHz, 2kW, 180V ACin PFC
27A
N/A
600V
2.3V
95.8%
The table above shows the performance of a WARP Speed IGBT, compared with that of a benchmark power MOSFET in a 2000W power supply. As can be seen from the efficiency curves, the WARP Speed IGBT in TO-247 offers the same efficiency at full load as the power MOSFET in Super-247. Note that this closely-matching performance is achieved for the IGBT using a much smaller silicon wafer die that that used for the power MOSFET. The device cost is dependent on the wafer dimensions; compared to a MOSFET of the same current ratings, WARP Speed IGBTs offer a lass expensive solution in many power conversion applications.Switch Mode Power Supplies in high voltage AC-DC applications normally operate in the 80KHz – 150KHz range. The recent advancement in semiconductor technology have dramatically reduced the IGBT current tail, cutting down switching losses and making these devices efficient in this frequency range. Several major companies have successfully implemented IGBTs in their SMPS applications.1

The usable current density of IGBTs is about 2 to 2.5 times that of a power MOSFET, enabling the use of a smaller die for the same current compared to a power MOSFET, therefore cutting cost. IGBTs are minority carrier devices and have superior conduction characteristics compared to power MOSFETs. This means that the IGBT offers a much lower conduction loss at higher currents, compared to an equivalent power MOSFET.

Until recently, IGBTs needed a negative drive bias to assure adequate turn off under high dV/dt conditions in a half bridge topology. In addition to making the drive circuit complex, it also made difficult the use of standard gate driver ICs to drive these devices. The WARP Speed IGBTs from IR do not need a negative bias for proper turn-off, they will work with a ‘positive only’ gate drive, eliminating the need for an auxiliary power supply, simplifying the control circuitry.2

IR WARP Speed™ IGBTs for SMPS Applications

Product
Package
Switching Speed
BVCES
VCE(on)
IC@25°C
IC@100°C
IRG4PC40W
TO-247AC
WARP
60-150kHz
600V
2.50V
40A
20A
IRG4PC50W
TO-247AC
WARP
60-150kHz
600V
2.30V
55A
27A
IRG4PC30W
TO-247AC
WARP
60-150kHz
600V
2.70V
23A
12A
IRG4BC30W
TO-220AB
WARP
60-150kHz
600V
2.70V
23A
12A
IRG4BC30W-S
D2Pak
WARP
60-150kHz
600V
2.1V
23A
12A
IRG4BC40W
TO-220AB
WARP
60-150kHz
600V
2.50V
40A
20A
IRG4IBC20W
TO-220
Full-Pak
Discrete
600V
2.60V
11.8A
6.2A
IRG4IBC30W
TO-220
Full-Pak
WARP
60-150kHz
600V
2.70V
17A
8.4A
IRG4BC20W
TO-220AB
WARP
60-150kHz
600V
2.60V
13A
6.5A
IRG4BC20W-S
D2Pak
WARP
60-150kHz
600V
2.6V
13A
6.5A
IRG4PF50W
TO-247AC
WARP
60-150kHz
900V
2.7V
51A
28A
IRG4PF50WD
TO-247AC
Co-Pack
WARP
60-150kHz
900V
2.7V
51A
28A

Technical Papers

1IGBTs Challenge MOSFETs in Switching Power Supplies PDF
Kevin Covi, Senior Technical Staff Member, IBM Corporation, pp. 28-29, Switching Power Magazine, Winter 2002

2“Positive Only” Gate Drive IGBT Created by Cres Minimization” PDF
Richard Francis, Peter Wood and Arnold Alderman, International Rectifier (Presented at PCIM 2001


For more information:
Contact the Technical Assistance Center or your local Sales Rep.